RJK0305DPB-00-J0资料

RJK0305DPB

Silicon N Channel Power MOS FET Power Switching

REJ03G1353-0900

Rev.9.00 Apr 19, 2006

Features

• • • • •

High speed switching

Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

RDS(on) = 6.7 mΩ typ. (at VGS = 10 V)

Outline

RENESAS Package code: PTZZ0005DA-A(Package name: LFPAK)5D54G31241, 2, 3 Source4 Gate5 DrainSSS123

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS +16/-12 V Drain current ID 30 A Note1Drain peak current ID(pulse) 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 2 10 A Avalanche energy EAR Note 2 10 mJ Channel dissipation Pch Note3 45 W Channel to Case Thermal Resistance θch-C 2.78 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C

Rev.9.00 Apr 19, 2006 page 1 of 6

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RJK0305DPB

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ± 0.1 µA VGS = +16/–12 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, ID = 1 mA

RDS(on) — 6.7 8.0 mΩ ID = 15 A, VGS = 10 V Note4 Static drain to source on state

resistance ID = 15 A, VGS = 4.5 V Note4 RDS(on) — 10 13 mΩ Forward transfer admittance |yfs| — 45 — S ID = 15 A, VDS = 10 V Note4 Input capacitance Ciss — 1250 — pF VDS = 10 V, VGS = 0,

f = 1 MHz Output capacitance Coss — 530 — pF Reverse transfer capacitance

Gate Resistance Total gate charge

Gate to source charge Gate to drain charge Turn-on delay time Rise time

Turn-off delay time

Fall time

Body–drain diode forward voltage Body–drain diode reverse recovery time

Notes: 4. Pulse test

Crss — 70 — pF Rg — 0.6 — Ω Qg — 8 — nC VDD = 10 V, VGS = 4.5 V,

ID = 30 A Qgs — 3.6 — nC

Qgd — 1.5 — nC

td(on) — 7.0 — ns VGS = 10 V, ID = 15 A,

VDD ≅ 10 V,RL = 0.67 Ω, tr — 3.0 — ns Rg = 4.7 Ω td(off) — 35 — ns tf — 3.0 — ns VDF — 0.85 1.08 V IF = 30 A, VGS = 0 Note4

30 — ns trr — IF = 30 A, VGS = 0

diF/ dt = 100 A/ µs

Rev.9.00 Apr 19, 2006 page 2 of 6

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RJK0305DPB

Main Characteristics

Power vs. Temperature Derating801000Maximum Safe Operation AreaChannel Dissipation Pch (W)Drain Current ID (A)6010010 µsµs40101 msOperation in201DS(on)050100150200Tc = 25°C0.11 shot Pulse0.1110100Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Typical Output Characteristics504.5 VPulse Test4030201010 V3.1 V2.9 V5040302010Typical Transfer CharacteristicsVDS = 10 VPulse TestDrain Current ID (A)2.7 VVGS = 2.5 VDrain Current ID (A)25°CTc = 75°C–25°C0246810012345Drain to Source Voltage VDS (V)Drain to Source Saturation Voltage vs.Gate to Source VoltageDrain to Source Saturation Voltage VDS (on) (mV)200Gate to Source Voltage VGS (V)Static Drain to Source on State Resistancevs. Drain CurrentDrain to Source on State Resistance RDS (on) (mΩ)100Pulse Test30VGS = 4.5 V10 V3Pulse Test15010010ID = 10 A505 A2 A01131030100300100048121620Gate to Source Voltage VGS (V)Drain Current ID (A)

Rev.9.00 Apr 19, 2006 page 3 of 6

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RJK0305DPB

Static Drain to Source on State Resistancevs. Temperature20Pulse Test100003000Static Drain to Source on State Resistance RDS (on) (mΩ)Typical Capacitance vs.Drain to Source VoltageCapacitance C (pF)16128ID = 2 A, 5 A, 10 AVGS = 4.5 VCiss1000Coss30010030100VGS = 0f = 1 MHz1020302 A, 5 A, 10 A40–2510 VCrss0255075100125150Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Reverse Drain Current vs.Source to Drain VoltageGate to Source Voltage VGS (V)2050Dynamic Input CharacteristicsDrain to Source Voltage VDS (V)504030201000816243240VDD = 25 V10 VVDSReverse Drain Current IDR (A)ID = 30 AVGS161284010 V405 V302010Pulse TestVDD = 25 V 10 VVGS = 0, –5 V00.40.81.21.62.0Gate Charge Qg (nc)Maximum Avalanche Energy vs.Channel Temperature DeratingRepetitive Avalanche Energy EAR (mJ)20IAP = 10 AVDD = 15 Vduty < 0.1 %Rg ≥ 50 ΩSource to Drain Voltage VSD (V)1612840255075100125150Channel Temperature Tch (°C)

Rev.9.00 Apr 19, 2006 page 4 of 6

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RJK0305DPB

Normalized Transient Thermal Impedance vs. Pulse WidthNormalized Transient Thermal Impedance γs (t)3Tc = 25°C1D = 10.50.30.20.10.1θch – c (t) = γ s (t) • θch – cθch – c = 2.78°C/W, Tc = 25°CPDMPWT1 m10 m100 m110D =PWT0.050.0320.0lseu1 p0.0hot1s0.0110 µ100 µPulse Width PW (s)Avalanche Test CircuitAvalanche Waveform1EAR = L • IAP2 •2VDSSVDSS – VDDV(BR)DSSIAPVDDVDSVDSMonitorLIAPMonitorRgD. U. TIDVin15 V50 Ω0VDDSwitching Time Test CircuitVin MonitorRgD.U.T.RLVDS = 10 VVinVoutVin10 VVoutMonitorSwitching Time Waveform90%10%10%90%td(on)tr10%90%td(off)tf

Rev.9.00 Apr 19, 2006 page 5 of 6

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RJK0305DPB

Package Dimensions

Package NameLFPAKJEITA Package CodeSC-100RENESAS CodePTZZ0005DA-APrevious CodeLFPAKVMASS[Typ.]0.080gUnit: mm4.95.3 Max4.0 ± 0.250.25–0.03+0.053.31.03.95146.1–0.3+0.10° – 8°1.1 Max+0.030.07–0.040.75 Max1.270.100.40 ± 0.060.25M0.6–0.201.3 Max+0.250.20–0.03+0.05(Ni/Pd/Au plating)4.2 Ordering Information

Part Name Quantity

RJK0305DPB-00-J0 2500 pcs

Shipping Container

Taping

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.9.00 Apr 19, 2006 page 6 of 6

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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.Notes regarding these materials1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.2. 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