专利名称：High reliability-high voltage junction
termination with charge dissipation layer
发明人：Dumitru Sdrulla,Duane Edward Levine,James
M. Katana,Martin David Birch
申请号：US13030907申请日：20110218公开号：US08476691B1公开日：20130702
专利附图：
摘要：A high voltage power semiconductor device includes high reliability-highvoltage junction termination with a charge dissipation layer. An active device area is
surrounded by a junction termination structure including one or more regions of apolarity opposite the substrate polarity. A tunneling oxide layer overlays the junctiontermination area surrounding the active device area in contact with the silicon substrateupper surface. A layer of undoped polysilicon overlays the tunneling oxide layer andspans the junction termination area, with connections to an outer edge of the junctiontermination structure and to a grounded electrode inside of the active area. The
tunneling oxide layer has a thickness that permits hot carriers formed at substrate uppersurface to pass through the tunneling oxide layer into the undoped polysilicon layer tobe dissipated but sufficient to mitigate stacking faults at the silicon surface.
申请人：Dumitru Sdrulla,Duane Edward Levine,James M. Katana,Martin David Birch
地址：Bend OR US,Bend OR US,Bend OR US,Louisville CO US
国籍：US,US,US,US
代理机构：Marger Johnson & McCollom, P.C.
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