专利名称：X-ray image sensor and method for
fabricating the same
发明人：Chang Won Kim,Chang Yeon Kim,Young Sik
Jeong,Jung Kee Yoon,Jae Beom Choi
申请号：US09536635申请日：20000328公开号：US06407393B1公开日：20020618
专利附图：
摘要：An X-ray image sensor which includes: a photoelectric conversion part effectingelectric charges in accordance with received amount of X-ray; a pixel electrode for
collecting the electric charges; a storage capacitor for storing the electric chargescollected in the pixel electrode, having a first capacitor electrode, a dielectric layerdeposited on the first capacitor electrode and a second capacitor electrode on thedielectric layer, the second capacitor electrode contacting the pixel electrode through afirst contact hole formed in a protection film on the second capacitor electrode; and aswitching part controlling release of electric charges stored in the storage capacitor toan outer circuit. By the present invention, the switching characteristics of the TFT isenhanced by way of forming a two-layered protection film of silicon nitride and BCB onthe channel portion of TFT, the capacity of the parasitic capacitor, which exists betweenthe pixel electrode and the TFT, can be decreased.
申请人：LG. PHILIPS LCD CO., LTD.
代理机构：Long Aldridge & Norman LLP
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