TRANSISTOR AND MANUFACTURING METHOD OF TRANSISTOR

专利名称：TRANSISTOR AND MANUFACTURING

METHOD OF TRANSISTOR

发明人：Yoshihisa USAMI,Yoshiki MAEHARA,Takahiko

ICHIKI

申请号：US15454247申请日：20170309

公开号：US20170179413A1公开日：20170622

专利附图：

摘要：A transistor and a manufacturing method of a transistor which prevents adecrease in mobility, prevents a decrease in a withstand voltage of the insulating layer,

and prevents a short circuit between a gate electrode and a semiconductor layer due tocurvature. A substrate having insulating properties, a source electrode and a drainelectrode disposed in a surface direction of a main surface of the substrate by beingseparated from each other, a gate electrode disposed between the source electrode andthe drain electrode in the surface direction of the substrate, a semiconductor layerdisposed in contact with the source electrode and the drain electrode, and an insulatingfilm disposed between the gate electrode and the semiconductor layer in a directionperpendicular to the main surface of the substrate are included, and a gap region isformed between the semiconductor layer and the insulating film.

申请人：FUJIFILM CORPORATION

地址：Tokyo JP

国籍：JP

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