Silicon wafer transfer storage method

专利名称：Silicon wafer transfer / storage method发明人：大関 正彬,佐藤 三千登,石井 薫申请号：JP2016117215申请日：20160613公开号：JP6572830B2公开日：20190911

摘要：The present invention provides a silicon wafer transfer/storage method fortransferring a silicon wafer from a first process to a second process which is the nextprocess in a silicon wafer processing process, or for storing the silicon wafer after thefirst process until being introduced into the second process, the silicon wafer

transfer/storage method being characterized in that a polymer with a molecular weightof not less than 100,000 is adsorbed onto a surface of the silicon wafer after the firstprocess, and the silicon wafer, with the polymer adsorbed onto the surface thereof, istransferred or stored until the second process. In this way, there is provided a siliconwafer transfer/storage method with which metal contamination and surface rougheningduring wafer transfer or storage can be inexpensively suppressed.

申请人：信越半導体株式会社

地址：東京都千代田区大手町二丁目２番１号

国籍：JP

代理人：好宮 幹夫,小林 俊弘

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