专利名称：EEPROM cell发明人：Kenichi Tanaka申请号：US06/896719申请日：19860815公开号：US04803662A公开日：19890207
摘要：An EEPROM cell for a memory device comprises a pair of bit lines each includinga floating-gate MOS transistor such that a selected one of the transistors can be chargedwhile the other is in uncharged condition by applying a higher voltage to a correspondingone of the bit lines and a lower voltage to the other bit line. Information stored in such acell can thus be rewritten simply by applying a high voltage to one of the pair of its bitlines without carrying out a time-consuming ERASE mode of operation.
申请人：SHARP KABUSHIKI KAISHA
代理机构：Flehr, Hohbach, Test, Albritton & Herbert
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