专利名称：EEPROM cell发明人：Katsuhiko, Ohsaki申请号：EP94302794.6申请日：19940420公开号：EP0623959A3公开日：19950201
专利附图：
摘要：An EEPROM cell has a first MOS transistor formed in a semiconductor substrate1 of a first conductivity type and having current conducting regions 2a, 2b of a secondconductivity type and a gate electrode 3, a well 4 of a second conductivity type providedin the substrate, a plate electrode 7 formed on the well with an insulating layer
interposed therebetween, and at least one region 5 of the first conductivity type formedin the well adjacent to the plate electrode. The gate electrode and the plate electrodeare connected in common and act as a floating gate 8. The well acts as a control gate.The EEPROM cell can be manufactured with ease by the standard CMOS process.
申请人：International Business Machines Corporation
地址：Old Orchard Road Armonk, N.Y. 10504 US
国籍：US
代理机构：Davies, Simon Robert
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