专利名称：METHOD AND APPARATUS FOR
CONTROLLING BEAM CURRENTUNIFORMITY IN AN ION IMPLANTER
发明人：D. Jeffrey LISCHER,John (Bon-Woong)
KOO,Peter F. KURUNCZI,ShardulPATEL,Wilhelm P. PLATOW
申请号：US12244978申请日：20081003
公开号：US20100084582A1公开日：20100408
专利附图：
摘要：An ion implantation system for neutralizing the space charge effect associatedwith a high current low energy ion beam. The implantation system includes an ion sourceconfigured to receive a dopant gas and generate ions having a particular energy andmass from which ions are extracted through an aperture. A work piece positioneddownstream of the ion source for receiving the extracted ions in the form of an ion beam.A bleed gas channel disposed between the ion source and the work piece. The bleed gaschannel supplying a gas used to neutralize the space charge effect associated with theion beam.
申请人：D. Jeffrey LISCHER,John (Bon-Woong) KOO,Peter F. KURUNCZI,ShardulPATEL,Wilhelm P. PLATOW
地址：Acton MA US,Andover MA US,Cambridge MA US,Woburn MA US,Somerville MAUS
国籍：US,US,US,US,US
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