专利名称：Method of fabricating thin film transistor
with supplementary gates
发明人：Hong Sun Kim申请号：US08/527008申请日：19950912公开号：US05693549A公开日：19971202
摘要：A thin film transistor is provided on a insulative substrate and includes apolysilicon body film having a ridge portion formed on a predetermined portion of thesubstrate. A first gate insulation film, a main gate and a cap oxide film are successivelyformed on the ridge portion of the polysilicon body. A second gate insulation film isprovided over the entire substrate surface covering the ridge portion and side surface ofthe gate insulation film, main gate and cap oxide film. Supplementary gates are thenprovided on the second gate insulation film adjacent respective sides of the ridge
portion. Source and drain regions are then formed in portions of the polysilicon body filmexposed by the main gate and the supplementary gates. Channel or offset regions can beformed in the polysilicon body film near the supplementary gates, thereby increasingchannel length while minimizing area occupied by the transistor. A highly integrateddevice having reduced short channel effects can thus be achieved.
申请人：LG SEMICON CO., LTD.
代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner, LP.
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