TC6320
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Initial Release
N- and P-Channel Enhancement-Mode MOSFET Pair
Features
Integrated gate-source resistor Integrated gate-source zener diode Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage
General Description
The Supertex TC6320TG consists of a high voltage low
threshold N-channel and P-channel MOSFET in an SO-8 package. Both MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. TC6320TG, a complementary high-speed, high voltage, gate-clamped N- and P-channel MOSFET pair in a single SO-8 package. The TC6320TG offers 200V breakdown voltage, 2.0A output peak current and low input capacitance. The 2.0A output current capability will minimize rise and fall times. The low input capacitance will minimize propagation delay times and also rise and fall times. The MOSFETs have integrated gate-source resistors and gate-source zener diode clamps that are desired for high voltage pulser applications saving board space and improving performance. It is specifically designed for applications in medical ultrasound transmitters and non-destructive evaluation in materials flaw detection, but it can also be used as an efficient buffer.
Application
High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interfaces
Package Option
Absolute Maximum Ratings*
Drain-to-Source Voltage Drain-to-Gate Voltage
Operating and Storage Temperature Soldering Temperature*
*Distance of 1.6mm from case for 10 seconds.
S1G1S2G212348765D1D1D2D2N-ChannelBVDSS BVDGS
-55°C to +150°C
300°C
P-ChannelSO-8 Package(top view)
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate \"products liability indemnification insurance agreement.\" Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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TC6320
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BVDSS / BVDGS RDS(ON) (max) Order Number / Package N-Channel P-Channel N-Channel P-Channel SO-8 200V -200V 7.0Ω 8.0Ω TC6320TG
N-Channel Electrical Characteristics (at TA=25°C unless otherwise specified)
Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
∆VGS(th) Change in VGS(th) with Temperature RGS Gate-Source Shunt Resistor
Change in RGS with Temperature ∆RGS
VzGS Gate-Source Zener Voltage
∆VzGS Change in VzGS with Temperature IDSS Zero Gate Voltage Drain Current ID(ON)
On-State Drain Current
Min Typ Max Units Conditions
200 V VGS=0V, ID=2mA 1.0 2.0 V VGS=VDS, ID=1mA -4.5 mV/°C VGS=VDS, ID=1mA 10 50 IGS=100µA KΩ TBD %/°C IGS=100µA 13.2 25 V IGS=2mA TBD mV/°C IGS=2mA 10 µA VGS=0V, VDS=Max Rating 1.0 mA VGS=0V, VDS=0.8 Max
Rating, TA=125°C
1.0 A VGS=4.5V, VDS=25V 2.0 VGS=10V, VDS=25V 8.0 VGS=4.5V, ID=150mA Ω 7.0 VGS=10V, ID=1.0A 1.0 %/°C VGS=4.5V, ID=150mA 400 mmho VDS=25V, ID=200mA 110 VGS=0V, VDS=25V
f=1MHz pF 60
23 10 VDD=25V,
ID=1.0A 15 ns
RGEN=25 Ω 20
15 1.8 V VGS=0V, ISD=0.5A 300 ns VGS=0V, ISD=0.5A
RDS(ON) Static Drain-to-Source
ON-State Resistance
∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance CRSS Reverse Transfer Capacitance td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time VSD Diode Forward Voltage Drop trr Reverse Recovery Time
Notes:
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested.
N-Channel Switching Waveforms and Test Circuit 10V90%
InputPulse 10%Generator 0Vt(ON)t(OFF) RGEN td(ON)trtd(OFF)tf VDDInput
10%10%Output0V90%90%VDDRLOUTPUTD.U.T
Supertex, Inc. January 21, 2003 2
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TC6320
________________________________________________________________________________ P-Channel Electrical Characteristics (at TA=25°C unless otherwise specified)
Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
∆VGS(th) Change in VGS(th) with Temperature RGS Gate-Source Shunt Resistor
Change in RGS with Temperature ∆RGS
VzGS Gate-Source Zener Voltage
∆VGS(th) Change in VzGS with Temperature IDSS Zero Gate Voltage Drain Current ID(ON)
On-State Drain Current
Min Typ Max Units Conditions
-200 V VGS=0V, ID=-2mA -1.0 -2.4 V VGS=VDS, ID=-1mA 4.5 mV/°C VGS=VDS, ID=-1mA 10 50 IGS=-100µA KΩ TBD %/°C IGS=-100µA 13.2 25 V IGS=-2mA TBD mV/°C IGS=-2mA -10 µA VGS=0V, VDS=Max Rating -1.0 mA VGS=0V, VDS=0.8 Max
Rating, TA=125°C
-1.0 A VGS=-4.5V, VDS=-25V -2.0 VGS=-10V, VDS=-25V 10 VGS=-4.5V, ID=-150mA Ω 8.0 VGS=-10V, ID=-1.0A 1.0 %/°C VGS=-10V, ID=-200mA 400 mmho VDS=-25V, ID=-200mA 200 VGS=0V, VDS=-25V
f=1MHz pF 55
30 10 VDD=-25V,
ID=-1.0A 15 ns
RGEN=25 Ω 20
15 -1.8 V VGS=0V, ISD=-0.5A 300 ns VGS=0V, ISD=-0.5A
RDS(ON) Static Drain-to-Source
ON-State Resistance
∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance CRSS Reverse Transfer Capacitance td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time VSD Diode Forward Voltage Drop trr Reverse Recovery Time
Notes:
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested.
P-Channel Switching Waveforms and Test Circuit
0VInput-10V90%t(ON)td(ON)0VOutputVDDtr90%10%t(OFF)td(OFF)90%RL10%VDDtfInputOUTPUT10%PulseGeneratorRGEND.U.T1/22/03
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