Semiconductor device having an aligned transistor

专利名称：Semiconductor device having an aligned

transistor and capacitive element

发明人：Hector Sanchez,Michael A.

Mendicino,Byoung W. Min,Kathleen C. Ju

申请号：US11098070申请日：20050404

公开号：US20050167782A1公开日：20050804

专利附图：

摘要：A semiconductor () has an active device, such as a transistor, with a directlyunderlying passive device, such as a capacitor (), that are connected by a via or conductive

region () and interconnect (). The via or conductive region () contacts a bottom surface ofa diffusion or source region () of the transistor and contacts a first () of the capacitorelectrodes. A laterally positioned vertical via () and interconnect () contacts a second () ofthe capacitor electrodes. A metal interconnect or conductive material () may be used as apower plane that saves circuit area by implementing the power plane underneath thetransistor rather than adjacent the transistor.

申请人：Hector Sanchez,Michael A. Mendicino,Byoung W. Min,Kathleen C. Ju

地址：Cedar Park TX US,Austin TX US,Austin TX US,Austin TX US

国籍：US,US,US,US

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