BZX84-V-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
•These diodes are also available in othercase styles and other configurations
including: the SOD-123 case with typee3designation BZT52 series, the dual zener
diode common anode configuration in the SOT-23case with type designation AZ23 series and thedual zener diode common cathode configurationin the SOT-23 case with type designation DZ23series.
•The Zener voltages are graded according to theinternational E 24 standard. Standard Zener volt-age tolerance is ± 5 %. Replace \"C\" with \"B\" for ± 2 % tolerance.
•Silicon Planar Power Zener Diodes •Lead (Pb)-free component
•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
31218078Mechanical DataCase: SOT-23 Plastic caseWeight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13\" reel (8 mm tape), 10 k/boxGS08 / 3 k per 7\" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Power dissipation
1) Device on fiberglass substrate, see layout.
Test conditionSymbolPtot
Value300 1)
UnitmW
Thermal Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Thermal resistance junction to ambient airJunction temperatureStorage temperature range
1)
Test conditionSymbolRthJATjTS
Value420 1)150- 65 to + 150
Unit°C/W°C°C
Device on fiberglass substrate, see layout.
Document Number 85763Rev. 1.7, 14-Jul-05
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BZX84-V-Series
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Electrical Characteristics
Partnumber
Marking Code
Zener Voltage RangeVZ @ IZT1
Vmin
BZX84C2V4-VBZX84C2V7-VBZX84C3V0-VBZX84C3V3-VBZX84C3V6-VBZX84C3V9-VBZX84C4V3-VBZX84C4V7-VBZX84C5V1-VBZX84C5V6-VBZX84C6V2-VBZX84C6V8-VBZX84C7V5-VBZX84C8V2-VBZX84C9V1-VBZX84C10-VBZX84C11-VBZX84C12-VBZX84C13-VBZX84C15-VBZX84C16-VBZX84C18-VBZX84C20-VBZX84C22-VBZX84C24-VBZX84C27-VBZX84C30-VBZX84C33-VBZX84C36-VBZX84C39-VBZX84C43-VBZX84C47-VBZX84C51-VBZX84C56-VBZX84C62-VBZX84C68-VBZX84C75-V
Z11Z12Z13Z14Z15Z16Z17Z1Z2Z3Z4Z5Z6Z7Z8Z9Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10Y11Y12Y13Y14Y15Y16Y17Y18Y19Y20Y21
2.22.52.83.13.43.744.44.85.25.86.477.78.59.410.411.412.413.815.316.818.820.822.825.12831343740444852586470
max2.62.93.23.53.84.14.655.466.67.27.98.79.610.611.612.714.115.617.119.121.223.325.628.93235384146505460667279
70 (≤100)75 (≤100)80 (≤95)85 (≤95)85 (≤90)85 (≤90)80 (≤90)50 (≤80)40 (≤60)15 (≤40)6.0 (≤10)6.0 (≤15)6.0 (≤15)6.0 (≤15)6.0 (≤15)8.0 (≤20)10 (≤20)10 (≤25)10 (≤30)10 (≤30)10 (≤40)10 (≤45)15 (≤55)20 (≤55)25 (≤70)25 (≤80)30 (≤80)35 (≤80)35 (≤90)40 (≤130)45 (≤150)50 (≤170)60 (≤180)70 (≤200)80 (≤215)90 (≤240)95 (≤255)
275300 (≤600)325 (≤600)350 (≤600)375 (≤600)400 (≤600)410 (≤600)425 (≤500)400 (≤480)80 (≤400)40 (≤150)30 (≤80)30 (≤80)40 (≤80)40 (≤100)50 (≤150)50 (≤150)50 (≤150)50 (≤170)50 (≤200)50 (≤200)50 (≤225)60 (≤225)60 (≤250)60 (≤250)65 (≤300)70 (≤300)75 (≤325)80 (≤350)80 (≤350)85 (≤375)85 (≤375)85 (≤400)100 (≤425)100 (≤450)150 (≤475)170 (≤500)
5555555555555555555555555222222222222
Dynamic Resistance
Test Current
Temp. Coefficient of Zener VoltageαVZ @ IZT110-4/°Cmin-9.0-9.0-9.0-8.0-8.0-7.0-6.0-5.0-3.0-2.0-1.0+2.0+3.0+4.0+5.0+5.0+5.0+6.0+7.0+7.0+8.0+8.0+8.0+8.0+8.0+8.0+8.0+8.0+8.0+10+10+10+10+9.0+9.0+10+10
max-4.0-4.0-3.0-3.0-3.0-3.0-1.0+2.0+4.0+6.0+7.0+7.0+7.0+7.0+8.0+8.0+9.0+9.0+9.0+9.0+9.5+9.5+10+10+10+10+10+10+10+12+12+12+12+11+12+12+12
11111111111111111111111110.50.50.50.50.50.50.50.50.50.50.50.5
50201055333213210.70.50.20.10.10.10.050.050.050.050.050.050.050.050.050.050.050.050.050.050.050.050.050.05
11111112224455678880.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.
Test Current
Reverse Leakage
Current
rzj @ IZT1
Ω
rzj @ IZT2IZT1mA
IZT2mA
IRµA
@ VRV
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Document Number 85763
Rev. 1.7, 14-Jul-05
元器件交易网www.cecb2b.com
BZX84-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking Code
Zener Voltage RangeVZ @ IZT1
Vmin
BZX84B2V4-VBZX84B2V7-VBZX84B3V0-VBZX84B3V3-VBZX84B3V6-VBZX84B3V9-VBZX84B4V3-VBZX84B4V7-VBZX84B5V1-VBZX84B5V6-VBZX84B6V2-VBZX84B6V8-VBZX84B7V5-VBZX84B8V2-VBZX84B9V1-VBZX84B10-VBZX84B11-VBZX84B12-VBZX84B13-VBZX84B15-VBZX84B16-VBZX84B18-VBZX84B20-VBZX84B22-VBZX84B24-VBZX84B27-VBZX84B30-VBZX84B33-VBZX84B36-VBZX84B39-VBZX84B43-VBZX84B47-VBZX84B51-VBZX84B56-VBZX84B62-VBZX84B68-VBZX84B75-V
Z50Z51Z52Z53Z54Z55Z56Z57Z58Z59Z60Z61Z62Z63Z64Z65Z66Z67Z68Z69Z70Z71Z72Z73Z74Z75Z76Z77Z78Z79Z80Z81Z82Z83Z84Z85Z86
2.352.652.943.233.533.824.214.6155.496.086.667.358.048.929.810.811.812.714.715.717.619.621.623.526.529.432.335.338.242.146.15054.960.866.673.5
max2.452.753.063.373.673.984.394.795.25.716.326.947.658.369.2810.211.212.213.315.316.318.420.422.424.527.530.633.736.739.843.947.95257.163.269.476.5
70 (≤100)75 (≤100)80 (≤95)85 (≤95)85 (≤90)85 (≤90)80 (≤90)50 (≤80)40 (≤60)15 (≤40)6.0 (≤10)6.0 (≤15)6.0 (≤15)6.0 (≤15)6.0 (≤15)8.0 (≤20)10 (≤20)10 (≤25)10 (≤30)10 (≤30)10 (≤40)10 (≤45)15 (≤55)20 (≤55)25 (≤70)25 (≤80)30 (≤80)35 (≤80)35 (≤90)40 (≤130)45 (≤150)50 (≤170)60 (≤180)70 (≤200)80 (≤215)90 (≤240)95 (≤255)
275300 (≤600)325 (≤600)350 (≤600)375 (≤600)400 (≤600)410 (≤600)425 (≤500)400 (≤480)80 (≤400)40 (≤150)30 (≤80)30 (≤80)40 (≤80)40 (≤100)50 (≤150)50 (≤150)50 (≤150)50 (≤170)50 (≤200)50 (≤200)50 (≤225)60 (≤225)60 (≤250)60 (≤250)65 (≤300)70 (≤300)75 (≤325)80 (≤350)80 (≤350)85 (≤375)85 (≤375)85 (≤400)100 (≤425)100 (≤450)150 (≤475)170 (≤500)
5555555555555555555555555222222222222
Dynamic Resistance
Test Current
Temp. Coefficient of Zener VoltageαVZ @ IZT110-4/°Cmin-9-9-9-8-8-7-6-5-3-2-123455567788888888810101010991010
max-4-4-3-3-3-3-124677778899999.59.5101010101010101212121211121212
11111111111111111111111110.50.50.50.50.50.50.50.50.50.50.50.5
50201055333213210.70.50.20.10.10.10.050.050.050.050.050.050.050.050.050.050.050.050.050.050.050.050.050.05
11111112224455678880.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.0.7 VZnom.
Test Current
Reverse Leakage
Current
rzj @ IZT1
Ω
rzj @ IZT2IZT1mA
IZT2mA
IRµA
@ VRV
Document Number 85763Rev. 1.7, 14-Jul-05
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BZX84-V-Series
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Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1811418117Figure1. Forward characteristicsFigure4. Dynamic Resistance vs. Zener Current
1811518118Figure2. Admissible Power Dissipation vs. Ambient TemperatureFigure5. Capacitance vs. Zener Voltage
°C1811618119Figure3. Pulse Thermal Resistance vs. Pulse DurationFigure6. Dynamic Resistance vs. Zener Current
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Document Number 85763
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°C1812018135,=Figure7. Dynamic Resistance vs. Zener Current
Figure10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C/W1812118124Figure8. Thermal Differential Resistance vs. Zener VoltageFigure11. Change of Zener Voltage vs. Junction Temperature
°C1812218136Figure9. Dynamic Resistance vs. Zener Voltage
Figure12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
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18126Figure13. Change of Zener Voltage vs. Junction Temperature
18137Figure14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
18138Figure15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
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Document Number 85763
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BZX84-V-Series
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18111Figure16. Breakdown Characteristics
18112Figure17. Breakdown Characteristics
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18113Figure18. Breakdown Characteristics
Layout for RTheta;JA test
Thickness: Fiberglass 0.059 in. (1.5 mm)Copper leads 0.012 in. (0.3 mm)
7.5(0.3)3(0.12)1(0.4)12(0.47)15(0.59)0.8(0.03)2(0.8)1(0.4)2(0.8)5(0.2)1.5(0.06)5.1(0.2)17451www.vishay.com8
Document Number 85763
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Package Dimensions in mm (Inches)
1.15(.045)2.6(.102)2.35(.092)ISOMethodE0.175(.007)0.098(.005)0.1(.004)max.0.4(.016)0.4(.016)3.1(.122)2.8(.110)0.4(.016)MountingPadLayout0.52(0.020)0.9(0.035)1.43(.056)1.20(.047)2.0(0.079)0.95(.037)0.95(.037)0.95(0.037)0.95(0.037)17418Document Number 85763Rev. 1.7, 14-Jul-05
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Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85763
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